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Photonics ProductsIlluminationLEDs & EmittersThrough Hole

Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-110W

  • Company: Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 140mW
  • Half Intensity Beam Angle (degrees): 110
  • Forward Voltage (V): 2
  • Forward Current: 500mA
  • Operating Temperature (°C): -40 - 100
  • Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
  • Spectral bandwidth @50%: 40 nm
  • Rise time: 20 nsec
  • Fall time: 20 nsec
  • Reverse Breakdown Voltage: 30 V

High Temperature GaAlAs IR Emitters feature:

-Wide Temperature rating
-880 nm peak emission
-2-Lead,TO-39 package
-Narrow angle of emission
-Isolated Cse
-RoHS and REACH compliant
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-110W

Opto Diode Corporation
1260 Calle Suerte
Camarillo, CA 93012
United States
Phone: +1 805-499-0335
Fax: +1 805-499-8108
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