Photonics Dictionary

III-V material

In semiconductor physics and materials science, the term "III-V materials" refers to compounds composed of elements from group III and group V of the periodic table. More specifically, these materials are compound semiconductors formed by combining elements from column III (boron, aluminum, gallium, indium, thallium) and column V (nitrogen, phosphorus, arsenic, antimony, bismuth).

Common examples of III-V materials include:

Gallium arsenide (GaAs): This compound semiconductor is widely used in electronic and optoelectronic devices, including high-frequency amplifiers, lasers, and solar cells.

Indium phosphide (InP): InP is another important III-V semiconductor with applications in telecommunications, photodetectors, and high-speed transistors.

Gallium nitride (GaN): GaN is a III-V compound semiconductor commonly used in light-emitting diodes (LEDs), laser diodes, and high-power electronic devices.

Aluminum gallium arsenide (AlGaAs): AlGaAs is a ternary alloy of aluminum, gallium, and arsenic, and it is employed in various electronic and optoelectronic applications.

Indium gallium nitride (InGaN): This ternary alloy of indium, gallium, and nitrogen is crucial in the development of blue and green LEDs and laser diodes.

III-V materials have unique electronic and optical properties, making them valuable for a wide range of applications in semiconductor technology. They are often used in the construction of high-performance electronic devices, light-emitting diodes, lasers, solar cells, and other optoelectronic components.

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