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Sensors & Detectors
CMOS
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Multispectral
MWIR
NIR
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VIS
XRAY
Key Suppliers
Opto Diode Corporation
Laser Components USA Inc.
Hamamatsu Corporation
BAE Systems Sensor Solutions
Chunghwa Leading Photonics Tech Co. Ltd.
Sensors Unlimited Inc.
Electro Optical Components Inc.
IRnova AB
Excelitas Technologies Corp.
Infrared Materials Inc.
VIGO Photonics
Balluff Inc.
Fermionics Opto-Technology
Teledyne Judson Technologies
149 products
Sensors & Detectors
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Multielement (8E – 32E) MCT/InAsSb Detectors
VIGO Photonics
Type:
Other
InAs/InAsSb Superlattice Detectors
VIGO Photonics
Type:
IR
Light Spectrum:
MWIR,LWIR
IDENT Sensors
Balluff Inc.
Type:
Other
FD80 Series InGaAs Photodiode
Fermionics Opto-Technology
Type:
Photodiodes
Photosensitvie Area:
80 μm dia.
IR Detector - BXP-25E
Opto Diode Corporation
Type:
IR
Light Spectrum:
NIR
Active Area:
4 mm²
Detectivity (D*) Ranges:
2.0 × 10(10) (D*)
Material:
PbSe
IR Detector - BXT2S-38T
Opto Diode Corporation
Type:
IR
Light Spectrum:
VIS,NIR
Active Area:
9 mm²
Material:
PbSe
ResponseTime:
12 µsec
IR Detector - BXT2S-68T
Opto Diode Corporation
Type:
IR
Light Spectrum:
VIS,NIR
Active Area:
36 mm²
Material:
PbSe
ResponseTime:
12 µsec
Quad- 4-channel PbSe Detector w/ Filters: B1-5(M)-4 / B1-6C2T(M)-4
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.4 × 10^10 cm Hz^.5W^-1 min
Dark Resistance-cooled model:
2.5 M Ohm typ
Delta T for TEC:
50 °C
PbS Non-Cooled Detectors: A2-5
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1 × 10^ 11 cm Hz^.5W^-1 Typ
Dark Resistance:
1 M Ohm Typical
Package:
TO-5
LDA512P25M-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.512MP
Sensor Width:
25
Sensor Height:
250
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
LDA1024P12.5S-17-T1
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
1KP
Sensor Width:
12.5
Sensor Height:
12.5
Scan Type & Rate:
Linear
kHz at Max. Res.:
22
Light Spectrum:
SWIR
Operating Temperature:
-20
Outputs:
2
Pixel Operability:
>99%
CIS2020
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
4.2MP
Sensor Width:
2048
Sensor Height:
2048
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
100
Light Spectrum:
VIS,NIR
ADC Resolution:
22 bits (2 x 11-bit)
Chroma:
Mono
Dynamic Range:
>90 dB
CIS2521
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
5MP
Sensor Width:
2160
Sensor Height:
2560
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
100
Light Spectrum:
VIS,NIR
ADC Resolution:
22 bits (2 x 11-bit)
Chroma:
Mono or Bayer RGB
Dynamic Range:
>83.5 dB
HWK1411
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
1.6MP
Sensor Width:
11.5
Sensor Height:
8.8
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
120
Light Spectrum:
VIS,NIR
ADC Resolution:
11 bits
Chroma:
Mono or Bayer RGB
Dynamic Range:
82 db
HWK4123
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
9.4MP
Sensor Width:
4096
Sensor Height:
2300
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
120
Light Spectrum:
VIS,NIR
ADC Resolution:
12 bits @ 60 fps; 11 bits @ 120 fps
Chroma:
Mono or Bayer RGB≤≤≤≤
Dynamic Range:
83 dB
IG26- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.45 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.45 A/W
IG24- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.35 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG22- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 2.15 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.40 A/W
IG22- Extended InGaAs Arrays
Laser Components USA Inc.
Type:
InGaAs
Max. Resolution:
256
Scan Type & Rate:
Linear
kHz at Max. Res.:
4000
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
≥ 2.10 µm
Operating Temperature:
-40 to +50 °C
Pixel Size:
30 x 250 µm
IG19- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
VIS,NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
IG17- InGaAs PIN Photodiodes
Laser Components USA Inc.
Type:
InGaAs
Light Spectrum:
NIR,SWIR
50% Cut-Off Wavelength:
≥ 1.65 µm
Operating Temperature:
-40 to +85 °C
Peak Responsitivity:
1.05 A/W
MWIR Detection Module
VIGO Photonics
Type:
Other
LiTaO3 Multi Channel Pyroelectric Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
UV,VIS,NIR,SWIR,MWIR,LWIR
Detector Type:
Pyroelectric
Spectral Range:
from UV to LWIR
CIS1910
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
2.1MP
Sensor Width:
1080
Sensor Height:
1920
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
100
Light Spectrum:
VIS,NIR
ADC Resolution:
22 bits (2 x 11-bit)
Chroma:
Mono or Bayer RGB
Dynamic Range:
>88 db
LTN4323
BAE Systems Sensor Solutions
Type:
sCMOS
Max. Resolution:
10.5MP
Sensor Width:
4432
Sensor Height:
2368
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
120
Light Spectrum:
VIS,NIR
ADC Resolution:
12 bits @ LG/HG; 11 bits @ 120 fps
Chroma:
Monochrome
Dynamic Range:
89 dB
InGaAs PIN Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
C30902SH Series Silicon APDs
Excelitas Technologies Corp.
Type:
Photodiodes
Photodiode UVG5S
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Active Area (circular):
5 mm2
Capacitance:
2 nF
Dark Current, ldr:
1 nA
Photodiode UVG100
Opto Diode Corporation
Type:
Photodiodes
Sensor Width:
100
Sensor Height:
100
Light Spectrum:
UV
Active Area:
100 mm²
Quantum Efficiency:
100%
Responsivity (test conditions at 254 nm):
0.09 A/W typical
Photodiode UVG20C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
UV
Capacitance:
4 nF (Typ.) to 10 nF (Max.)
Circular Active Area (Typ.):
19 mm²
Internal Quantum Efficiency:
100%
J22 & J23 InGaAs Detectors
Teledyne Judson Technologies
Type:
InGaAs
Light Spectrum:
NIR,SWIR
S12101 CCD Area Image Sensor
Hamamatsu Corporation
Type:
CCD
Max. Resolution:
4MP
Scan Type & Rate:
Area
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048 x 2048
Pixel Size:
12 x 12 µm
Spectral Response Range:
165-1100 nm
S11639-01 CMOS Linear Image Sensor
Hamamatsu Corporation
Type:
CMOS
Max. Resolution:
2KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
10000
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048
Pixel Size:
14 µm x 200 µm
Spectral Response Range:
200-1000 nm
BASICevo Broadband Pro NDIR
Electro Optical Components Inc.
Type:
Other
Max. Resolution:
2000
Sensor Width:
37
Sensor Height:
30
Light Spectrum:
MWIR
Cooled PbSe Detector: B2-8C1T
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
2 × 10^10 typ
Dark Resistance:
2.5 M Ohm at -25 °C typical
Delta T for TEC:
50 °C
Photodiode NXIR-RF36
Opto Diode Corporation
Type:
Photodiodes
Active Area:
5 mm²
Responsivity @1064 nm:
0.38 A/W
Responsivity @850 nm:
0.65 A/W
Photodiode NXIR-RF100C
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
NIR
Active Area:
1 mm²
Responsivity @1064 nm:
0.35 A/W
Responsivity @850 nm:
0.62 A/W
Photodiode ODD-900-001
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
mm2
Operating Spectral Range:
730 nm - 1100 nm
Peak Sensitivity:
940 nm
Photodiode ODD-900-002
Opto Diode Corporation
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Active Area:
8 mm²
Operating Spectral Range:
400 nm - 1100 nm
Peak Sensitivity:
940 nm
Mid-IR Detector - BXT2S-28T
Opto Diode Corporation
Type:
IR
Light Spectrum:
MWIR
Active Area (Circular):
20 mm²
Capacitance:
1.55 (typ.) to 3 (max.) nF
Material:
PbSe
IR Detector BXF-2
Opto Diode Corporation
Type:
IR
Sensor Width:
2
Sensor Height:
2
Active Element Area:
4 mm²
Element Operating Temp.:
+23 °C
Peak Sensitivity (min.):
3.6 µm
Oden MW
IRnova AB
Type:
IR
Max. Resolution:
327KP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
60
Light Spectrum:
MWIR
Material:
HOT T2SL (SLS)
Pitch:
15 µm
Spectral range:
3 to 5 µm
Fenrir LW Pol
IRnova AB
Type:
IR
Max. Resolution:
327KP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
60
Light Spectrum:
LWIR
Material:
Polarized QWIP
Polarized:
4 strokes
Embla 1055
IRnova AB
Type:
IR
Max. Resolution:
82KP
Sensor Width:
320
Sensor Height:
256
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
60
Light Spectrum:
LWIR
Gas Detected:
C2H2
Gas Detected:
NH3
Gas Detected:
SF6
Tor LW
IRnova AB
Type:
IR
Max. Resolution:
327KP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
60
Light Spectrum:
LWIR
Material:
QWIP
NEDT:
25 mk
Operability:
99.95
Garm LW Pol
IRnova AB
Type:
IR
Max. Resolution:
82KP
Sensor Width:
320
Sensor Height:
256
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
60
Light Spectrum:
LWIR
Material:
QWIP
Polarized:
4 strokes
PbSe Non-Cooled Detectors: B2-5
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.8 × 10^ 10 cm Hz^.5W^-1 Typ
Dark Resistance:
1 M ohm
Package:
TO-5
PbSe Full- and Half-ball Lens Detectors: B1-5(M)-FL/L
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D* - Full-ball LENS:
1.0 × 10^11 cm Hz^.5W^-1 min
D*- Half-ball LENS:
4.5 × 10^10 cm Hz^.5W^-1 min
Dark Resistance:
1 M Ohm Typical
FPA0640P15F-22-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.64MP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
240
Effective Pixel Array:
636×508
Operating Temperature:
+71~-40°C
Outputs:
2/4/8
FPA0640P15F-19-T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
0.64MP
Sensor Width:
640
Sensor Height:
512
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
240
Light Spectrum:
SWIR
Effective Pixel Array:
636×508
Operating Temperature:
+71~-40°C
Outputs:
2/4/8
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