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Sensors & Detectors
CMOS
sCMOS
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InGaAs
IR
UV
Photodiodes
Other
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P
KP
MP
GP
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-
Sensor Height
-
Scan Type & Rate
Area
Linear
Frames (fps) at Max. Res.
-
kHz at Max. Res.
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FIR
LWIR
Multispectral
MWIR
NIR
SWIR
UV
VIS
XRAY
26 products
Sensors & Detectors
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Cooled PbSe Detector: B2-8C1T
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
2 × 10^10 typ
Dark Resistance:
2.5 M Ohm at -25 °C typical
Delta T for TEC:
50 °C
Photodiode NXIR-RF36
Opto Diode Corporation
Type:
Photodiodes
Active Area:
5 mm²
Responsivity @1064 nm:
0.38 A/W
Responsivity @850 nm:
0.65 A/W
Mid-IR Detector - BXT2S-28T
Opto Diode Corporation
Type:
IR
Light Spectrum:
MWIR
Active Area (Circular):
20 mm²
Capacitance:
1.55 (typ.) to 3 (max.) nF
Material:
PbSe
IR Detector BXF-2
Opto Diode Corporation
Type:
IR
Sensor Width:
2
Sensor Height:
2
Active Element Area:
4 mm²
Element Operating Temp.:
+23 °C
Peak Sensitivity (min.):
3.6 µm
IR Detector - BXP-25E
Opto Diode Corporation
Type:
IR
Light Spectrum:
NIR
Active Area:
4 mm²
Detectivity (D*) Ranges:
2.0 × 10(10) (D*)
Material:
PbSe
IR Detector - BXT2S-38T
Opto Diode Corporation
Type:
IR
Light Spectrum:
VIS,NIR
Active Area:
9 mm²
Material:
PbSe
ResponseTime:
12 µsec
IR Detector - BXT2S-68T
Opto Diode Corporation
Type:
IR
Light Spectrum:
VIS,NIR
Active Area:
36 mm²
Material:
PbSe
ResponseTime:
12 µsec
Quad- 4-channel PbSe Detector w/ Filters: B1-5(M)-4 / B1-6C2T(M)-4
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.4 × 10^10 cm Hz^.5W^-1 min
Dark Resistance-cooled model:
2.5 M Ohm typ
Delta T for TEC:
50 °C
PbSe Non-Cooled Detectors: B2-5
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1.8 × 10^ 10 cm Hz^.5W^-1 Typ
Dark Resistance:
1 M ohm
Package:
TO-5
PbSe Full- and Half-ball Lens Detectors: B1-5(M)-FL/L
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D* - Full-ball LENS:
1.0 × 10^11 cm Hz^.5W^-1 min
D*- Half-ball LENS:
4.5 × 10^10 cm Hz^.5W^-1 min
Dark Resistance:
1 M Ohm Typical
PbS Non-Cooled Detectors: A2-5
Infrared Materials Inc.
Type:
IR
Light Spectrum:
SWIR,MWIR
D*:
1 × 10^ 11 cm Hz^.5W^-1 Typ
Dark Resistance:
1 M Ohm Typical
Package:
TO-5
PB55- Cooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
5.2 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 1.2 E+10 cm Hz 1/2 / W @ 90 Hz
PB50- Cooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
4.9 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 1.1 E+10 cm Hz 1/2 / W @ 90 Hz
PB45- Uncooled PbSe Detectors
Laser Components USA Inc.
Type:
Other
Light Spectrum:
SWIR
20% Cut-Off Wavelength:
4.7 µm
Operating Temperature:
-65 to +90 °C
Peak D*:
Typ. 6.0 E+09 cm Hz 1/2 / W @ 90 Hz
MWIR Detection Module
VIGO Photonics
Type:
Other
C30733 Series Avalanche Photodiodes
Excelitas Technologies Corp.
Type:
Photodiodes
FPA0640P15F-17-T1 or T2
Chunghwa Leading Photonics Tech Co. Ltd.
Type:
InGaAs
Max. Resolution:
328KP
Sensor Width:
9.6
Sensor Height:
7.68
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
300
Light Spectrum:
SWIR
Package Type:
28-pin metal SDIP
Pixel Pitch:
15 μm
Quantum Efficiency:
>70%
S12101 CCD Area Image Sensor
Hamamatsu Corporation
Type:
CCD
Max. Resolution:
4MP
Scan Type & Rate:
Area
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048 x 2048
Pixel Size:
12 x 12 µm
Spectral Response Range:
165-1100 nm
S13255-2048-02 CCD Linear Image Sensor
Hamamatsu Corporation
Type:
CCD
Max. Resolution:
2KP
Scan Type & Rate:
Linear
kHz at Max. Res.:
10000
Light Spectrum:
UV,VIS,NIR,SWIR
Number of Pixels:
2048
Pixel Size:
14 µm x 500 µm
Spectral Response Range:
200-1100 nm
G13393-0808W InGaAs Area Image Sensor
Hamamatsu Corporation
Type:
InGaAs
Max. Resolution:
82KP
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
228
Light Spectrum:
NIR,SWIR
Number of Pixels:
320 x 256
Pixel Size:
20 x 20 µm
Spectral Response Range:
0.95-1.7 µm
Photodiode - APX 158-03-007
Advanced Photonix
Type:
InGaAs
Sensor Width:
3.375
Sensor Height:
3.375
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
3 (typ.) to 04 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
3 kΩ
Photodiode - APX 158-02-003
Advanced Photonix
Type:
InGaAs
Sensor Width:
2.25
Sensor Height:
2.25
Scan Type & Rate:
Linear
Light Spectrum:
VIS,NIR,SWIR
Breakdown Voltage:
9 (typ.) V
Dark Current:
2.5 (typ.) to 20 (max.) nA
Inter-Electrode Resistance (Between diagonally opposing contacts):
2.2 kΩ
2-Color Sandwich Detectors
OSI Optoelectronics Inc.
Type:
Photodiodes
Light Spectrum:
VIS,NIR
Operation:
Photovoltaic
Spectral Range (TEC) Silicon/InGaAs_):
400-1800 nm
Spectral Range Silicon/InGaAs:
400-1800 nm
FPA640x512_P15-TEx (Badger-Tx)
ANDANTA GmbH
Type:
InGaAs
Max. Resolution:
328KP
Sensor Width:
25.4
Sensor Height:
7.3
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
350
Light Spectrum:
NIR,SWIR
Cooler:
1- or 2- stage cooler
Package Type:
28p metal SDIP
Pixel Pitch:
15 μm × 15 μm
BOA Spot
Teledyne DALSA, North American Sales (Machine Vision)
Type:
CCD
Sensor Width:
1280
Sensor Height:
960
Scan Type & Rate:
Area
Frames (fps) at Max. Res.:
45
Light Spectrum:
VIS
BOA Spot ID
Teledyne DALSA, North American Sales (Machine Vision)
Type:
CCD
Sensor Width:
1280
Sensor Height:
960
Scan Type & Rate:
Area
Light Spectrum:
VIS
Sensors & Detectors Products
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