Abbreviations/Acronyms: M

molecular beam epitaxy — A well-controlled thin film technique for growing films with good crystal structure in ultra high vacuum environments at very low deposition rates. MBE is also commonly used in the manufacture of semiconductor devices and solar cells.

magnetic Czochralski process — Introduction of an external magnetic field in the Czochralski melting process for crystal growth in order to influence the flow and dampen the amplitudes of the melt oscillations that occur in the process. This is accomplished when the external magnetic field generates an electric field inside the melt, which further induces an internal magnetic field in the now electrically conducting melt. The amplitudes of the now induced electric and magnetic fields can be controlled by the strength of the external magnetic field allowing control of the MCZ process.