Photonics Dictionary: G

A GaAlAs laser is a type of semiconductor laser diode that emits light in the near-infrared region of the electromagnetic spectrum. It is composed of layers of gallium, aluminum, and arsenic, hence...

GaN (gallium nitride) distributed feedback (DFB) lasers refer to a specific type of semiconductor laser based on Gallium Nitride materials and designed with a distributed feedback structure. These...

Gallium nitride-based light-emitting diodes (GaN-based LEDs) are semiconductor devices that emit light when an electric current passes through them. These LEDs are constructed using gallium nitride...

1. That branch of optics that illustrates the theory in which q is substituted for sin q in Snell's law. Effective results are achieved if the aperture and field angle are made very small. The...

The area of optics in which the propagation of light is described by geometrical lines (or rays) governed by Fermat's Principle. Geometrical optics is useful as long as the objects in which the light...

Germicidal ultraviolet (GUV) refers to a specific range of UV radiation that has disinfectant properties capable of killing or inactivating microorganisms, including bacteria, viruses, and fungi. The...

A controlled random search process, such as generalized simulated annealing, that has been incorporated into many optical design programs as a way of helping designers find the most suitable lens...

The term gradient-index profile refers to a specific type of refractive index distribution within an optical material. In optics, the refractive index of a material describes how much the speed of...

A grating beamsplitter is an optical device that utilizes the principles of diffraction to split a beam of light into multiple beams, often redirecting them at specific angles. It is based on the...

A GRIN (gradient index) lens is a type of optical lens that utilizes a gradient in refractive index across its volume rather than having a uniform refractive index like conventional lenses. This...

A photodiode that has been designed so that the bar of semiconductor material has a PN junction perpendicular to its length and an ohmic contact at each of its ends.