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High-Power GaAIAs IRLED Illuminator - OD-663-850
High-Power GaAIAs IRLED Illuminator - OD-663-850
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 425mW
  • Half Intensity Beam Angle (degrees): 120
  • Fall time: 100 nsec
  • Lead soldering temperature: 260 °C
  • Reverse Breakdown Voltage: 5 V
Premier Product
Photodiode NXIR-RF36
Photodiode NXIR-RF36
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Active Area: 5 mm²
  • Responsivity @1064 nm: 0.38 A/W
  • Responsivity @850 nm: 0.65 A/W
Photodiode NXIR-RF100C
Photodiode NXIR-RF100C
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Light Spectrum: NIR
  • Active Area: 1 mm²
  • Responsivity @1064 nm: 0.35 A/W
  • Responsivity @850 nm: 0.62 A/W
Photodiode ODD-900-001
Photodiode ODD-900-001
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Light Spectrum: VIS,NIR
  • Active Area: mm2
  • Operating Spectral Range: 730 nm - 1100 nm
  • Peak Sensitivity: 940 nm
Photodiode ODD-900-002
Photodiode ODD-900-002
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Light Spectrum: VIS,NIR
  • Active Area: 8 mm²
  • Operating Spectral Range: 400 nm - 1100 nm
  • Peak Sensitivity: 940 nm
Mid-IR Detector - BXT2S-28T
Mid-IR Detector - BXT2S-28T
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: IR
  • Light Spectrum: MWIR
  • Active Area (Circular): 20 mm²
  • Capacitance: 1.55 (typ.) to 3 (max.) nF
  • Material: PbSe
IR Detector BXF-2
IR Detector BXF-2
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: IR
  • Sensor Width: 2
  • Sensor Height: 2
  • Active Element Area: 4 mm²
  • Element Operating Temp.: +23 °C
  • Peak Sensitivity (min.): 3.6 µm
IR Detector - BXP-25E
IR Detector - BXP-25E
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: IR
  • Light Spectrum: NIR
  • Active Area: 4 mm²
  • Detectivity (D*) Ranges: 2.0 × 10(10) (D*)
  • Material: PbSe
IR Detector - BXT2S-38T
IR Detector - BXT2S-38T
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: IR
  • Light Spectrum: VIS,NIR
  • Active Area: 9 mm²
  • Material: PbSe
  • ResponseTime: 12 µsec
IR Detector - BXT2S-68T
IR Detector - BXT2S-68T
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: IR
  • Light Spectrum: VIS,NIR
  • Active Area: 36 mm²
  • Material: PbSe
  • ResponseTime: 12 µsec
Narrow-Angle, Ultlra-High-Power IR Emitter: OD-110L
Narrow-Angle, Ultlra-High-Power IR Emitter: OD-110L
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 110mW
  • Half Intensity Beam Angle (degrees): 7
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
Large, Rectangular Photodiode - AXUV300C
Large, Rectangular Photodiode - AXUV300C
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Sensor Width: 21.56
  • Sensor Height: 15.36
  • Light Spectrum: UV,VIS,NIR,Multispectral
  • Breakdown Voltage: 5 V, min.; 25 V typical
  • Capacitance: 25 nF, typical.; 40 nF, max.
  • Detection: Radiation, Electrons, Photons
Photodiode UVG5S
Photodiode UVG5S
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Light Spectrum: UV
  • Active Area (circular): 5 mm2
  • Capacitance: 2 nF
  • Dark Current, ldr: 1 nA
High-Power GaAIAs IRLED Illuminator - OD-663
High-Power GaAIAs IRLED Illuminator - OD-663
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 170mW
  • Half Intensity Beam Angle (degrees): 120
  • Fall time: 1 µsec
  • Power Output at 8 A: 3500 mW
  • Reverse Breakdown Voltage: 30 V
Medium-Angle, High-Temp IR Emitter: OD-850LHT
Medium-Angle, High-Temp IR Emitter: OD-850LHT
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 35mW
  • Half Intensity Beam Angle (degrees): 35
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
High Rel Rad-Hard IR Emitter: OD-800W
High Rel Rad-Hard IR Emitter: OD-800W
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 810 - 810
  • Power Output: 3mW
  • Half Intensity Beam Angle (degrees): 80
  • Capacitance: 150 pF
  • Fall time: 60 nsec
  • Lead soldering temperature: 240 °C
High Rel Rad-Hard IR Emitter: OD-800L
High Rel Rad-Hard IR Emitter: OD-800L
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 810 - 810
  • Power Output: 3mW
  • Half Intensity Beam Angle (degrees): 35
  • Capacitance: 150 pF
  • Fall time: 60 nsec
  • Lead soldering temperature: 240 °C
High Rel Rad-Hard IR Emitter: OD-800F
High Rel Rad-Hard IR Emitter: OD-800F
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 810 - 810
  • Power Output: 3mW
  • Half Intensity Beam Angle (degrees): 8
  • Capacitance: 150 pF
  • Fall time: 60 nsec
  • Lead soldering temperature: 240 °C
Photodiode UVG100
Photodiode UVG100
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Sensor Width: 100
  • Sensor Height: 100
  • Light Spectrum: UV
  • Active Area: 100 mm²
  • Quantum Efficiency: 100%
  • Responsivity (test conditions at 254 nm): 0.09 A/W typical
High Temp GaAIAs IR Emitter: OD-110LISOLHT
High Temp GaAIAs IR Emitter: OD-110LISOLHT
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 100mW
  • Half Intensity Beam Angle (degrees): 7
  • Fall Time: 20 nsec
  • Lead Soldering Temperature: 260 °C
  • Reverse Voltage: 5 V
Large, Square Radiation Detector: AXUV576C
Large, Square Radiation Detector: AXUV576C
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Sensor Width: 576.5
  • Sensor Height: 576.5
  • Light Spectrum: XRAY,Multispectral
  • Large, Square Active Area: 576.5 mm x 576.5 mm
  • Lead-SolderingTemperature: 260 °C
  • Min. Reverse Breakdown: 5V
Wide Angle, High-Temp GaAIAs IR LED- OD-110WISOLHT
Wide Angle, High-Temp GaAIAs IR LED- OD-110WISOLHT
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 140mW
  • Half Intensity Beam Angle (degrees): 110
  • Fall Time: 20 nsec
  • Lead Soldering Temperature: 260 °C
  • Reverse Breakdown Voltage: 5 V
Photodiode UVG5
Photodiode UVG5
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Sensor Width: 5
  • Sensor Height: 5
  • Light Spectrum: UV
  • Active Area (Circular): Ø 5 mm2 (typ.)
  • Capacitance: 2 nanofarads (nF)
  • Responsivity @254 nm: 0.115 A/W (typ.)
Photodetector - SXUV100TF135B
Photodetector - SXUV100TF135B
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Other
  • Light Spectrum: UV
  • Active Area: 100 mm²
  • Low Capacitance: 260 pF
  • Reverse Bias Voltage: 12V
Photodetector - SXUV100TF135
Photodetector - SXUV100TF135
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Other
  • Light Spectrum: UV
  • Active Area: 100 mm²
  • Low Capacitance: 260 pF
  • Reverse Bias Voltage: 12V
Photodiode UVG20S
Photodiode UVG20S
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Light Spectrum: UV
  • Active Area (circular): 24 mm2
  • Responsivity @ 254 nm: 0.115 A/W (typical)
  • Rise Time: 4 µsec
Photodiode UVG20C
Photodiode UVG20C
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Light Spectrum: UV
  • Capacitance: 4 nF (Typ.) to 10 nF (Max.)
  • Circular Active Area (Typ.): 19 mm²
  • Internal Quantum Efficiency: 100%
Photodiode UVG12
Photodiode UVG12
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Light Spectrum: UV,VIS
  • Circular Active Area: 13.2 mm²
  • Detection Wavelength Range: 193 nm - 400 nm
  • Quantum Efficiency: 100% in UV and Visible Regions
Photodiode - AXUV20A
Photodiode - AXUV20A
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Sensor Width: 5.5
  • Sensor Height: 5.5
  • Light Spectrum: UV,VIS,NIR
  • Capacitance: 4 nF, typical.; 10 nF, max.
  • Circular Photodiode: 5.5 mm²
  • Detection: Radiation, Electron, Photon
Photodiode - AXUV63HS1
Photodiode - AXUV63HS1
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Sensor Width: 9
  • Sensor Height: 9
  • Light Spectrum: XRAY
  • High-Speed Circular Active Area: 9 mm²
  • Lead-SolderingTemperature: 260 °C
  • Maximum Dark Current: 100 nA
Photodiode NXIR-5C
Photodiode NXIR-5C
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Light Spectrum: NIR
  • Active Area (circular): 5 mm²
  • Responsivity @ 1064 nm: 0.35 A/W
  • Responsivity @850 nm: 0.62 A/W
Photodiode - AXUV20HS1
Photodiode - AXUV20HS1
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Photodiodes
  • Light Spectrum: XRAY
  • Electron Detection: 200 eV
  • Grid lines: 5 µm
  • High-Speed Circular Active Area: 5 mm Ø
Photodetector - SXUV5
Photodetector - SXUV5
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Other
  • Light Spectrum: UV
  • Capacitance: 500 - 1500 pF
  • Circular Active Area: 5 mm2
  • Response Time: 1 - 2 nsec
High-Power GaAlAs IRLED Illuminator: OD-669-850
High-Power GaAlAs IRLED Illuminator: OD-669-850
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Other
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 1250mW
  • Half Intensity Beam Angle (degrees): 120
  • Fall Time: 200 nsec
  • Power Dissipation: 6 W
  • Reverse Breakdown Voltage: 30 V
High-Power GaAlAs IRLED Illuminator: OD-669
High-Power GaAlAs IRLED Illuminator: OD-669
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Other
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 500mW
  • Half Intensity Beam Angle (degrees): 120
  • Capacitance: 11 pF
  • Fall Time: 3 µsec
  • Power Dissipation: 6 W
High-Power GaAlAs IRLED Illuminator: OD-666
High-Power GaAlAs IRLED Illuminator: OD-666
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Other
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 880 - 880
  • Power Output: 330mW
  • Half Intensity Beam Angle (degrees): 120
  • Capacitance: 15 pF
  • Fall Time: 2 µsec
  • Power Dissipation: 4 W
High-Power GaAlAs IRLED Illuminator: OD-669-850
High-Power GaAlAs IRLED Illuminator: OD-669-850
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: Other
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 1250mW
  • Half Intensity Beam Angle (degrees): 120
  • Continuous Forward Current: 370 mA
  • Fall Time: 200 nsec
  • Reverse Breakdown Voltage: 30 V
Wide-Angle, High-Temp IR Emitter: OD-850WHT
Wide-Angle, High-Temp IR Emitter: OD-850WHT
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 26mW
  • Half Intensity Beam Angle (degrees): 80
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
Wide-Angle, High-Power IR Emitter: OD-850W
Wide-Angle, High-Power IR Emitter: OD-850W
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 40mW
  • Half Intensity Beam Angle (degrees): 80
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 250mW
  • Half Intensity Beam Angle (degrees): 110
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse Breakdown Voltage: 30 V
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-110W
Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-110W
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 140mW
  • Half Intensity Beam Angle (degrees): 110
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse Breakdown Voltage: 30 V
Narrow-Angle, High-Temp IR Emitter: OD-850FHT
Narrow-Angle, High-Temp IR Emitter: OD-850FHT
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 22mW
  • Half Intensity Beam Angle (degrees): 8
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
Medium-Angle, High-Power IR Emitter: OD-850L
Medium-Angle, High-Power IR Emitter: OD-850L
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 35mW
  • Half Intensity Beam Angle (degrees): 35
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
Visible LED: OD-685C
Visible LED: OD-685C
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Surface Mount
  • TO Package: Other
  • Color: Red
  • Power Output: 2mW
  • Forward Voltage (V): 2.2
  • Forward Current: 50mA
  • Operating Temperature (°C): -40 - 125
  • Max. Junction Current: 125 °C
  • Peak Forward Current: 100 mA
  • Power Dissipation: 120 mW
High-Power Infrared Emitter: OD-850F
High-Power Infrared Emitter: OD-850F
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO46
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 30mW
  • Half Intensity Beam Angle (degrees): 8
  • Fall time: 20 nsec
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
High-Output Red LED: OD-624L
High-Output Red LED: OD-624L
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Red
  • Wavelength (nm): 624 - 635
  • Power Output: 170mW
  • Half Intensity Beam Angle (degrees): 7
  • Lead Soldering Temperature: 260 °C
  • Reverse Voltage: 10 V
High-Output Blue LED: OD-469L
High-Output Blue LED: OD-469L
Opto Diode Corporation
  • Category: Illumination / LEDs & Emitters
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Blue
  • Wavelength (nm): 465 - 475
  • Power Output: 170mW
  • Half Intensity Beam Angle (degrees): 7
  • Lead Soldering Temperature: 260 °C
  • Power Dissipation: 1000 mW
  • Reverse Voltage: 5 V
Photodetector - AXUV100TF400
Photodetector - AXUV100TF400
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Other
  • Light Spectrum: UV
  • Active Area: 10 x 10 mm
  • Operating/Storage Temps. in ambient environments: -10 °C to +40 °C
  • Operating/Storage Temps. in nitrogen or vacuum environments: -20 °C to +80 °C
Photodetector - AXUV100TF030
Photodetector - AXUV100TF030
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Other
  • Light Spectrum: UV
  • Active Area: 10 x 10 mm
  • Operating/Storage Temps. in ambient environments: -10 °C to +40 °C
  • Operating/Storage Temps. in nitrogen or vacuum environments: -20 °C to +80 °C
Photodetector SXUV20C
Photodetector SXUV20C
Opto Diode Corporation
  • Category: Sensing & Detection / Sensors & Detectors
  • Type: Other
  • Light Spectrum: UV
  • Active Area (Circular): 20 mm²
  • Capacitance: 1.55 (typ.) to 3 (max.) nF
  • Rise Time: 2 µsec
Photonics Products

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