< More White Papers & Application Notes Subscribe to our E-Newsletters

APPLICATION NOTE: Full-Field Hotspot Detection and High-Resolution Topographic Characterization of Post-CMP Wafers with 3D Optical Profiling (10/6/2021)

APPLICATION NOTE: Full-Field Hotspot Detection and High-Resolution Topographic Characterization of Post-CMP Wafers with 3D Optical Profiling

If you are having problems seeing this newsletter, please click here to view

Wednesday, October 6, 2021

WHITE PAPERS & APPLICATION NOTES

Full-Field Hotspot Detection and High-Resolution Topographic Characterization of Post-CMP Wafers with 3D Optical Profiling

Traditional methods of post-CMP process evaluation have analytical limitations that, in light of tightening process control limits, do not meet the growing need for more accurate wafer surface characterization in semiconductor chip manufacturing. This application note describes how white light interferometry (WLI) enables advanced packaging manufacturers and CMP specialists to obtain critical data from the high-resolution, full-die maps this 3D optical profiling technique makes possible.

DOWNLOAD WHITE PAPER

More White Papers from This Sponsor

- Spatiospectral Nanoimaging of Surface Phonon Plasmons
- Characterization of Advanced Semiconductor Materials and Processes with Nanoscale IR Spectroscopy

Visit Photonics Media to download other white papers and learn more about the latest developments in lasers, imaging, optics, biophotonics, machine vision, spectroscopy, microscopy, photovoltaics and more.

www.photonics.com/WhitePapers.aspx

We respect your time and privacy. You are receiving this email because you are a Photonics Spectra magazine subscriber. You may use the links below to manage your subscriptions or contact us.

Questions: [email protected]

Unsubscribe | Subscribe | Subscriptions | Privacy Policy | Terms and Conditions of Use

Photonics Media, 100 West St., PO Box 4949, Pittsfield, MA 01202-4949
© 1996 - 2024 Laurin Publishing. All rights reserved. Photonics.com is Registered with the U.S. Patent & Trademark Office.
Reproduction in whole or in part without permission is prohibited.