- Model: Narrow-Angle, Ultlra-High-Power IR Emitter: OD-110L
- Company: Opto Diode Corporation
- Type: Through Hole
- TO Package: TO39
- High Power: Yes
- Color: Infrared
- Wavelength (nm): 850 - 850
- Power Output: 110mW
- Half Intensity Beam Angle (degrees): 7
- Forward Voltage (V): 2
- Forward Current: 500mA
- Operating Temperature (°C): -40 - 100
- Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
- Lead soldering temperature: 260 °C
- Reverse voltage: 5 V
- Spectral bandwidth @50%: 40 nm
- Rise time: 20 nsec
- Fall time: 20 nsec
Super High-Power GaAIAs IR Emitters feature:
-Ultra-high optical output
-850 nm peak emission
-Standard 3-Lead,Hermetically-sealed TO-39
-Chip size: 0.026" x 0.026"
1260 Calle Suerte
Camarillo, CA 93012
United States
Phone: +1 805-499-0335
Fax: +1 805-499-8108