High Temp GaAIAs IR Emitter: OD-110LISOLHT
- Model: High Temp GaAIAs IR Emitter: OD-110LISOLHT
- Company: Opto Diode Corporation
- Type: Through Hole
- TO Package: TO39
- High Power: Yes
- Color: Infrared
- Wavelength (nm): 880 - 880
- Power Output: 100mW
- Half Intensity Beam Angle (degrees): 7
- Forward Voltage (V): 2
- Forward Current: 500mA
- Operating Temperature (°C): -65 - 150
- Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
- Lead Soldering Temperature: 260 °C
- Reverse Voltage: 5 V
- Spectral Bandwidth @50%: 55 nm
- Rise Time: 20 nsec
- Fall Time: 20 nsec
High Temperature GaAlAs IR Emitters feature:
-Wide Temperature rating
-880 nm peak emission
-2-Lead,TO-39 package
-Narrow angle of emission
-Isolated Cse
-RoHS and REACH compliant
1260 Calle Suerte
Camarillo, CA 93012
United States
Phone: +1 805-499-0335
Fax: +1 805-499-8108