- Model: Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-110W
- Company: Opto Diode Corporation
- Type: Through Hole
- TO Package: TO39
- High Power: Yes
- Color: Infrared
- Wavelength (nm): 850 - 850
- Power Output: 140mW
- Half Intensity Beam Angle (degrees): 110
- Forward Voltage (V): 2
- Forward Current: 500mA
- Operating Temperature (°C): -40 - 100
- Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
- Lead soldering temperature: 260 °C
- Reverse voltage: 5 V
- Spectral bandwidth @50%: 40 nm
- Rise time: 20 nsec
- Fall time: 20 nsec
- Reverse Breakdown Voltage: 30 V
High Temperature GaAlAs IR Emitters feature:
-Wide Temperature rating
-880 nm peak emission
-2-Lead,TO-39 package
-Narrow angle of emission
-Isolated Cse
-RoHS and REACH compliant
1260 Calle Suerte
Camarillo, CA 93012
United States
Phone: +1 805-499-0335
Fax: +1 805-499-8108