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Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250

  • Model: Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250
  • Company: Opto Diode Corporation
  • Type: Through Hole
  • TO Package: TO39
  • High Power: Yes
  • Color: Infrared
  • Wavelength (nm): 850 - 850
  • Power Output: 250mW
  • Half Intensity Beam Angle (degrees): 110
  • Forward Voltage (V): 2
  • Forward Current: 500mA
  • Operating Temperature (°C): -40 - 100
  • Applications: Biomedical/Medical, Industrial, Military, Scientific Research, Other
  • Lead soldering temperature: 260 °C
  • Reverse voltage: 5 V
  • Spectral bandwidth @50%: 40 nm
  • Rise time: 20 nsec
  • Fall time: 20 nsec
  • Reverse Breakdown Voltage: 30 V

Wide Angle, Super-High-Power High GaAlAs IR Emitters feature:

-Very uniform optical Beam
-Four wire bonds on die corners
-Chip Size: 0.026" x 0.026"
-Standard 3-Lead TO-39 Hermetic package
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Wide Angle, Super-High-Power GaAIAs IR Emitter - OD-250

Opto Diode Corporation
1260 Calle Suerte
Camarillo, CA 93012
United States
Phone: +1 805-499-0335
Fax: +1 805-499-8108
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