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LASER DIODE BONDER

Photonics Spectra
Feb 2002
Semiconductor Equipment Corp.Request Info
 
A semiautomatic laser diode bonder that provides finished bond precision of ±1 to 2 µm has been introduced by Semiconductor Equipment Corp. The Model 410XP bonder features 750x magnification, a wide range of closed-loop control, a compact footprint and an optional ultrasonic transducer for thermosonic high-bond-load applications involving gold stud bumping. The company says its viewing system is easy to calibrate and can move in 0.1-µm increments. The system is suitable for bonding flip chips, vertical-cavity surface-emitting lasers, edge-emitting laser diodes and laser bars/arrays.


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