May 2003Hamamatsu CorporationRequest Info
The G8370-10 InGaAs PIN photodiode from Hamamatsu Corp. is suitable for laser diode applications, including design into power monitors. The device has a spectral response of 0.9 to approximately 1.7 µm and a ceramic package that can operate over a temperature range of –25 to 70 °C. Typical specifications include peak sensitivity of 0.95 A/W at 1.55 µm, dark current of 0.2 µA, polarization-dependent loss of 5 mdB and photoresponse nonuniformity of ±2%. The G8370-10 photodiode measures 16.5 x 15 x 12.7 mm and has a Ø10-mm active area.