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High-Intensity Green LED Chip

Photonics.com
Jul 2007
OSRAM Opto Semiconductors Inc.Request Info
 
For Backlighting Applications
SANTA CLARA, Calif., July 2, 2007 -- Osram Opto Semiconductors announced it is developing a low current, high-power green 1 mm2 chip featuring the latest in thin-GaN (gallium nitride) technology. With unprecedented brightness values of more than 180 lm achieved in the laboratory, the new green chip will be used in the company’s Dragon and Ostar LEDs and is targeted for LCD display backlighting applications.

OsramOpto.jpg“A new epitaxial process and improved chip design, as well as low power consumption, have given this new green chip a major boost in efficiency and brightness that makes it ideal for display backlighting applications,” said Matthias Peter, development engineer at Osram Opto.

The new 180-lm green chip has a power consumption of 1.4 W, achieves 72 lm/W, and features a wavelength of 527 nm from an operating current of 1 A. In comparison, the existing green Platinum Dragon LED produces 100 lm from an operating current of 1 A, Osram Opto said.

With a current range of 100 to 350 mA, and a power consumption of 1 W, the new green chip provides an efficient and cool base, as well as uniform and increased brightness over large display diagonals with less LEDs, the company said.

The green chips are expected to go into series production by the third quarter of 2008.

For more information, visit www.osram-os.com

Osram Opto Semiconductors Inc.
2650 San Tomas Expressway
Suite 200
Santa Clara, CA 95051



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