May 1999Hamamatsu CorporationRequest Info
Hamamatsu Corp. has introduced a silicon photodiode for near-infrared operation that is suited for spectrophotometry, optical measurement and environmental sensors that measure oxides of nitrogen. The S6204-03 is housed in a 1-in.-diameter package and is powered by both 5 V and ±15 VDC. The silicon photodiode has a spectral response from 320 to 1100 nm and features an internal preamplifier for low-light-level detection and internal thermoelectric cooling that enhances stability and noise performance. Feedback resistance is 10 G(omega), photosensitivity is -6.5 V/nW, noise equivalent power 2 fW/Hz1/2 and cutoff frequency 130 Hz.