High-Power 30-Die NIR LED Array
Jul 2010Opto Diode CorporationRequest Info
NEWBURY PARK, Calif., July 23, 2010 — Opto Diode Corp. has developed the first in a series of high-power LED arrays, the OD-850-30-030. The company says that the 30-die near-infrared LED array delivers more efficient operation and higher power with a narrow beam angle of 30°.
The device has a peak wavelength of 850 nm, with a minimum of 840 and a maximum of 865, and total optical power output of 16 W.
Suitable for night vision systems and skin therapy applications, the array is available for shipping in OEM quantities.
The company says that making an array results in a more compact size, compared to using discrete components, and this is critical in applications that have space limitations. The LED array’s narrow beam angle results in higher intensities than could be achieved with a chip-on-a-board solution.
Thermal parameters for storage range from -40 to 125 °C, with the operating temperature range from -20 to 100 °C. The maximum junction temperature is 125 °C with a thermal resistance, junction to case, of 0.8 °C/W.