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IR-Enhanced CCD Image Sensors

Photonics.com
Nov 2010
Hamamatsu Photonics UK Ltd.Request Info
 
WELWYN GARDEN CITY, England, Nov. 16, 2010 — Hamamatsu Photonics UK Ltd. has introduced the S11510 series full frame transfer CCD (FFT-CCD) image sensors with ultrahigh sensitivity in the near-IR region. Using proprietary technology in laser processing, it is possible to form a microelectromechanical systems structure on the back side of the CCD, which results in a much higher sensitivity at wavelengths longer than 800 nm.

The sensors feature quantum efficiency of 40% at 1000 nm, without the need for a deep depletion structure, with its corresponding drawback of higher dark signal. They are available with 1024 or 2048 pixels, with each pixel measuring 14 × 14 µm.

In addition to high IR sensitivity, the devices can be used with a long active area in the sensor height direction. This can be achieved via binning, making them suitable for Raman spectroscopy. They also feature low etalation, which is often a problem in Raman applications, where smooth and stable output is important.

The S11510 series is similar in design to the conventional S10420-01 FFT-CCD, and the two are pin-compatible, allowing for operation under the same drive conditions. This makes for a simple way to improve the near-IR sensitivity of an existing image sensor or spectrometer.


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1024 pixels2048 pixelsbinningbiophotonicsCCDEuropeFFT-CCDfull frame transferhamamatsuimage sensorsimaginglong active areaMEMSmicroelectromechanical systemsnear-IRProductsRaman spectroscopyS11510Sensors & Detectorsspectroscopy

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