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CCD Image Sensors

Jan 2011
Hamamatsu Photonics UK Ltd.Request Info
Hamamatsu Photonics UK Ltd. has introduced the S11510 series full-frame transfer CCD image sensors with ultrahigh sensitivity in the near-IR region. Using proprietary laser processing technology, it is possible to form a microelectromechanical systems structure on the back side of the CCD, which results in higher sensitivity at wavelengths longer than 800 nm. The devices feature quantum efficiency of 40% at 1000 nm, without the need for a deep depletion structure. They are available with 1024 or 2048 pixels, with each pixel measuring 14 x 14 μm. In addition to high IR sensitivity, the devices feature a long active area in the sensor height direction. This can be achieved using binning, making them suitable for use in Raman spectroscopy.


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binningBiophotonicsBreakthroughProductsCCDdeep depletion structurefull-frame transfer CCDhamamatsuHamamatsu PhotonicsHamamatsu Photonics UK Ltd.image sensorsimagingIR sensitivitylaser processingmicroelectromechanical systemnear-IRpixel measurementpixelsquantum efficiencyRaman spectroscopyS11510sensor heightSensors & Detectorswavelength

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