IR-Enhanced CCD Image Sensor
Feb 2011Hamamatsu CorporationRequest Info
BRIDGEWATER, N.J., Feb. 28, 2011 — For Raman spectroscopy and photometric applications, Hamamatsu Corp. has introduced the S11500-1007 back-thinned fast Fourier transform CCD.
It has a wide spectral response range from 200 to 1100 nm and features 40% quantum efficiency at 1000 nm. Its enhanced sensitivity in the near-infrared region, which is beneficial for detecting long-wavelength Raman emissions, is made possible by applying proprietary laser processing technology to form a microelectromechanical systems structure on the back side of the CCD.
The sensor has 1024 × 122 pixels with a pixel size of 24 × 24 µm. With binning, the CCD can be operated as a linear image sensor. The binning operation ensures an even higher signal-to-noise ratio and faster signal processing speeds compared to methods that use an external circuit to add signals digitally. It is supplied in a 24-pin ceramic dual in-line package with a quartz glass window. It can be used in conjunction with the company’s C7040 multichannel detector head, which is sold separately.
Features include two-phase vertical and horizontal clock phase, a one-stage metal-oxide semiconductor field-effect transistor source follower output circuit, an operating temperature from -50 to 50 °C, output transistor drain voltage from -0.5 to 25 V, reset drain voltage from -0.5 to 18 V, and vertical and horizontal input source voltage from -0.5 to 18 V. Minimum external load resistance is 20 kΩ and maximum, 24.