S10341 Si Avalanche Photodiodes
Jul 2011Hamamatsu CorporationRequest Info
BRIDGEWATER, N.J., July 25, 2011 — Hamamatsu Corp. has launched a line of silicon (Si) avalanche photodiodes for 800-nm measurements.
The S10341 series devices offer high sensitivity at 800 nm, making them suitable for use in optical rangefinders, laser radar and free-space optics. They exhibit a quantum efficiency of 75% at 800 nm and are sensitive between 400 and 1000 nm. Other features include low noise, high-speed response and stable operation at low bias. They are supplied in a package measuring 1.8 × 3.1 × 1 mm.
Two configurations are available. The S10341-02’s photosensitive area has a 0.2-mm diameter. At 100× gain, it has a typical cutoff frequency of 1000 MHz and 50-pA dark current. The S10341-05 has a photosensitive area measuring 0.5 mm in diameter. Its typical cutoff frequency and dark current are 900 MHz and 100 pA, respectively, at 100× gain.