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High-Power IR Emitters

Photonics Spectra
Jun 2012
Opto Diode CorporationRequest Info
 
NEWBURY PARK, Calif., March 29, 2012 — Opto Diode Corp. has announced the OD-110L, the first in a series of superhigh-power gallium aluminum arsenide (GaAlAs) infrared emitters. The devices feature ultrahigh optical output with a very narrow optical beam, making them suitable for night vision and other military imaging applications.

They are housed in a standard three-lead hermetically sealed TO-39 package to accommodate the small-size (0.6604 × 0.6604 mm) chip. There are four wire bonds on die corners, and all surfaces are gold-plated for durability. Typical total power output at 25 °C is 110 mW, and minimum output is 55 mW with a peak emission wavelength at 850 nm.

The absolute maximum rating at 25 °C (case) for power dissipation is 1000 mW, with a continuous-forward-current rating of 500 mW. The OD-110L lead-soldering temperature (1/16 in. from the case for 10 s) is 260 °C.

Storage and operating temperatures range from −40 to 100 °C, making the devices suitable for use in harsh environments and for integration into illuminators and markers, and systems using night vision goggles and cameras.


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AmericasCaliforniacamerasdefenseElectronics & Signal AnalysisGaAlAs IR emitters TO-39gallium aluminum arsenidegold-plated GaAlAs IR emittersimaginginfrared emittersIRlight sourcesmilitary imagingNew Productsnight visionOD-110LopticsOpto DiodeProducts

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