Request InfoOpto Diode CorporationNEWBURY PARK, Calif., April 16, 2012 — Opto Diode, a division of ITW, has introduced the third in its family of three super-high-power infrared emitters. Based on gallium aluminum arsenide (GaAlAs) technology, the OD-250 features a wide-angle, uniform optical beam with ultrahigh optical output. Typical total power output is 250 mW, with a minimum of 160 mW. Peak emission wavelength is 850 nm, making the emitter suitable for imaging in military and security applications. It has a spectral bandwidth of 40 nm at 50% with a half-intensity beam angle at 110°. 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