OD-110W High-Power IR Emitters
May 2012Opto Diode CorporationRequest Info
NEWBURY PARK, Calif., May 14, 2012 — Opto Diode Corp. has introduced the OD-110W, the second product in the superhigh-power series of gallium aluminum arsenide infrared emitters. Featuring a very uniform optical beam, the device is designed for military imaging applications.
It features four wire bonds on die corners and a hermetically sealed three-lead standard TO-39 package, with all surfaces gold-plated for added durability. Typical total power output is 140 mW (minimum 80 mW), with a peak emission wavelength at 850 nm.
Power dissipation is 1000 mW at absolute maximum ratings of 25 °C (case) and a continuous forward current of 500 mA. The peak forward current is 1.5 A, and the reverse voltage is 5 V. The lead soldering temperature is at 260 °C, making the IR emitter reliably operational in extreme temperatures, from −40 to 100 °C.
The OD-110W is suitable for systems using night vision imaging technology, such as goggles and/or cameras, or for integration into markers and illuminators.