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800-nm Silicon Avalanche Photodiodes
Oct 2012
OSI Optoelectronics Inc.Request Info
HAWTHORNE, Calif., Oct. 15, 2012 — OSI OptoElectronics Inc. has introduced the APD Series 8-150, a line of silicon avalanche photodiodes optimized for operation in the 800-nm wavelength region.

Available in hermetically sealed metal packages, the devices offer low noise and high sensitivity over bandwidths up to 1 GHz. They feature 0.2-, 0.5-, 1- and 1.5-mm-diameter active areas and exhibit low temperature coefficients of 0.45/V °C, making them suitable for optical fiber communications, laser rangefinder and high-speed photometry applications.

Storage temperature is from −55 to 125 °C, and operating temperature ranges from −40 to a maximum of 100 °C.


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The science of the measurement of light intensity, where "light'' refers to the total integrated range of radiation to which the eye is sensitive. It is distinguished from radiometry in which each separate wavelength in the electromagnetic spectrum is detected and measured, including the ultraviolet and infrared.
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