Pulsed Laser Diodes
Dec 2012OSI Laser Diode Inc.Request Info
EDISON, N.J., Dec. 13, 2012 — OSI Laser Diode Inc. has introduced a line of high-power monolithic stacked pulsed laser diodes for military/defense, industrial, automotive and machine vision applications. Single and stacked pulsed laser diodes are available at up to 375 W, and fiber-coupled devices are available at up to 188 W. Custom packaging is also available upon request.
The devices feature stable output from −40 to 85 °C for operation in extreme environments. Rise time is 1 ns, laser beam spread is 9° × 25°, and duty cycle is 0.1%.
The laser diodes operate at a typical peak wavelength of 905 nm, with a minimum of 895 nm and maximum of 915 nm, with a spectral width of 8 nm. They are specified with drive conditions at 100 ns, 30 A, 1 kHz at 25 °C. Peak power at 25 °C is 60, 120, 180, 240 or 300 W, depending upon the specific device.
They are suitable for applications such as rangefinding, ceilometers, weapons simulation, missile fuse initiators, battlefield illumination, line of sight communication links, traffic monitoring, topographical profiling, surveying equipment, light detection and ranging, laser speed guns, fog detection, optical thyristor initiation and adaptive cruise control.