Request InfoWolfspeed Inc.Cree Inc.’s second-generation silicon carbide metal-oxide semiconductor field-effect transistor (MOSFET) delivers higher efficiency in a smaller size. The 1200-V MOSFETs enable system operation at higher switching frequencies, resulting in smaller passive components, especially smaller inductors, and a 50% to 70% reduction in current in some high-power applications. For solar inverters and uninterruptible power supply (UPS) systems, the efficiency improvement is accompanied by size and weight reductions. In motor drive applications, the power density can be more than...See full productRelated content from Photonics MediaPRODUCTSPhotonics.com 6/22/2023Broadband UV PhotodiodesSilicon Carbide (SiC) Broadband UV Photodiodes from Advanced Photonix are designed for UV source monitoring. 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