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9xx-nm Semiconductor Lasers

Photonics Spectra
Jul 2013
JENOPTIK Laser GmbH, Healthcare & IndustryRequest Info
 
JENA, Germany, May 9, 2013 — Jenoptik Laser GmbH’s semiconductor lasers have obtained 74 percent efficiency and are suitable as pumping sources for solid-state and fiber lasers, and for direct diode applications.

The 9xx-nm single emitters have a 90-µm aperture and provide 12-W output; at this power level, and when mounted on a passive heat sink, they have an efficiency of 64 percent. Their beam divergence is 26° in the fast-axis direction and 6.5° in the slow-axis direction (full width half maximum of the peak at 12 W), making them suitable for coupling in a 105-µm fiber.

The 9xx-nm mini bars offer five emitters with a 90-µm width and 1000-µm spacing each. Mounted on a passive heat sink, their highest efficiency is 69 percent at a maximum output power of 55 W. The beam divergences are the same as those for the single emitter.

The devices are available for wavelengths of 915, 940, 955 nm and, with low filling factor, of 976 nm.


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GLOSSARY
beam divergence
Increase in the diameter of an initially collimated beam, as measured in milliradians (mrad) at specified points; i.e., where irradiance is a given fraction (often 1/e2) of peak irradiance.
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