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UVG100 Photodiode
Sep 2013
Opto Diode CorporationRequest Info
NEWBURY PARK, Calif., Sept. 24, 2013 — Opto Diode Corp. has introduced the UVG100 silicon photodiode for applications that require extreme stability for the detection of vacuum-UV and extreme-UV photons.

The photodetector has a 100-mm2 active area and features good UV response. After exposure to megajoules/cm2, it showed less than 2 percent responsivity loss. The device delivers 100 percent quantum efficiency and features high radiation hardness. A proprietary oxynitride front window protects it from humidity and other environmental conditions.

Responsivity under test conditions at 254 nm is a minimum of 0.08, typical 0.09, and maximum 0.13 A/W. The rise time at 10 V is a maximum of 10 µs. The shunt resistance at ±10 mV is a minimum of 20 MΩ, the reverse breakdown voltage is typically 10 V, and the capacitance is typically 10 nF with a maximum of 20 nF.


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silicon photodiode
Semiconductor PN or PIN junction that uses absorbed photon energy in the range of 1.06 to 1.03 eV to excite carriers from one energy level to a higher state. The resultant change in the charge across the junction is monitored as a current in the external photodiode circuit.
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