Photodiode for EUV
Nov 2014Opto Diode CorporationRequest Info
NEWBURY PARK, Calif., Aug. 15, 2014 — A new photodiode from Opto Diode Corp. is suited for high-power laser monitoring at wavelengths from 1 to 200 nm and other applications involving extreme ultraviolet conditions.
The SXUV Ø2.5 mm is housed in a TO-39, a three-pin, windowless package responsive down to 1 nm. The circular active area is typically Ø2.5 mm and has a minimum shunt resistance (Rsh) of 20 megaohms at ±10 mV (typical).
Device parameters include reverse breakdown voltage of 20 V, with the capacitance of 1 nF. The response time is 1 ns (typical) to a maximum of 2 ns.