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High-Speed Photodiode
Sep 2014
Opto Diode CorporationRequest Info
NEWBURY PARK, Calif., Sept. 26, 2014 — Opto Diode High Speed PhotodiodeA new high-speed photodiode from Opto Diode Corp. offers a 5-mm circular active area for use in extreme UV (1 to 200 nm) detection.

The SXUV20HS1 is designed to dissipate the optical energy of high-powered UV lasers without the typical measurement degradation that occurs with prolonged exposure.

The photodiode’s sensitive area is 19.7 mm2. Grid lines are at 5 µm, with the pitch at 100 µm. Shunt resistance is 5 MOhms and capacitance is typically 200 pF to a maximum of 800 pF. Parameters include reverse breakdown voltage at 160 V (minimum), dark current of 100 nA (under test conditions of 150 V), and a rise time of 2 ns (maximum).

The device is suited for applications such as photolithography, where tight control of the laser’s output, a fast response and measurement stability are critical.


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A lithographic technique using an image produced by photography for printing on a print-nonprint, sectioned surface.
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