EUV Lithography System
Oct 2015ASML NVRequest Info
VELDHOVEN, Netherlands, Oct. 1, 2015 — ASML Holding NV has announced the TWINSCAN NXT:1980Di immersion lithography system to support multiple-patterning performance requirements.
A 1.2-nm dedicated chuck overlay and 10-nm focus uniformity are featured, with new grid calibrations and hardware to enable chipmakers to achieve tighter process windows for next-generation process nodes. Throughput is improved by 10 percent to 275 wafers per hour.
The system is designed to accommodate mix-and-match use with extreme ultraviolet (EUV) lithography, achieving 2-nm matched-machine overlay.