Sep 2016ON Semiconductor
PHOENIX — ON Semiconductor has announced the 8-MP KAI-08052 image sensor, providing twice the sensitivity in near-infrared (NIR) wavelengths as the company’s standard Interline Transfer CCD pixel design.
The CCD pixel design used in the KAI-08052 extends the electron capture region deeper in the silicon to better capture electrons generated by long wavelength photons. This deeper pixel well improves detection of NIR wavelengths by up to a factor of two, depending on the specific wavelength studied. With the well structure isolating the photodiodes from each other, this increase in NIR sensitivity comes without any reduction in image sharpness.
This device’s sensitivity is critical for applications such as scientific and medical imaging where samples emit or fluoresce in NIR wavelengths, or in machine vision and intelligent transportation systems where NIR illumination is often used to better examine an object or isolate a vehicle’s license plate. The device is available in a RoHS-compliant CPGA-67 package in monochrome, Bayer color and sparse color configurations, and is fully pin compatible with the existing KAI-08051 image sensor, as well as a full family of 5.5- and 7.4-μm CCD image sensors.