2D Material Growth Process
Jul 2016Oxford Instruments plc, NanoscienceRequest Info
ABINGTON, England, July 27, 2016 — Oxford Instruments plc has announced MoS2 growth process using the Nanofab nanoscale growth system.
Single-layer MoS2 is a direct band gap semiconductor with wide ranging applications in optoelectronics such as LEDs, photovoltaics, photodetectors and biosensors, while multilayer MoS2 is an indirect band gap semiconductor for digital electronics.
The process was developed on a Nanofab system equipped with precursor delivery modules capable of delivering a wide range of liquid, solid and metal organic precursors suitable for 2D materials growth. Offering growth on a range of substrates including sapphire and atomic layer deposition alumina, the system is capable of depositing other 2D transition metal dichalcogenides.