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InGaAs Photodiodes

Photonics.com
Oct 2017
Discovery Semiconductors Inc.Request Info
 
EWING, N.J., Oct. 24, 2017 — High-speed, extended InGaAs 2-μm photodiodes from Discovery Semiconductors Inc. feature high-current handling.

The devices can be used for characterizing ultra-fast, mode-locked fiber lasers at multiple wavelengths ranging from 1550 to 2100 nm. Broad operation bandwidth and high speed of the photodiode allows for acquisition of broadband radio-frequency spectra of mode-locked lasers operating at different wavelengths in the 1.55- to 2.1-μm range.

Relatively high power handling is advantageous while characterizing ultrashort femtosecond optical pulses with high peak power. Excellent sensitivity and low noise enable the implementation of sophisticated measurement techniques such as dispersive Fourier transform for real-time shot-to-shot noise characterization of broadband mid-IR supercontinuum sources.


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