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Silicon Photodiodes

Jan 2018
OSI Optoelectronics Inc.Request Info
HAWTHORNE, Calif. — Silicon PhotodiodesUV-enhanced, planar-diffused silicon photodiodes from OSI Optoelectronics Inc. are specially designed for low-light-level detection in the UV spectral range.

The product series includes the UVD planar-diffused and UVE planar-diffused IR suppressed devices, both featuring excellent UV response. The UVD and UVE photodiodes exhibit lower capacitance and higher response times. The UVD photodiodes peak at 970 nm, while the UVE devices peak at 720 nm and suppress the near-IR, making them particularly useful in applications where blocking the NIR spectral region is required. Both products can be biased for lower capacitance, wider dynamic range and high-speed response times. Alternatively, the UVD and UVE series may be operated in photovoltaic mode for situations that require low drift with temperature variations.

Available in varying sizes, footprints and metal or ceramic packages, the UV-enhanced planar diffused silicon photodiodes are ideal for applications in medical instrumentation, pollution monitoring, spectroscopy, fluorescence, water purification, UV exposure meters and more.


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