Request InfoMicrosemi Corp.ALISO VIEJO, Calif., March 27, 2018 — The 40 mOhm MSC040SMA120B next-generation 1200-V silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) from Microsemi Corp. is a SiC solution designed for power applications in rugged environments. The SiC MOSFET product family is avalanche rated, demonstrating the devices' ruggedness for industrial, automotive and commercial aviation power applications with high short-circuit withstand rating for robust operation. SiC MOSFETs and new SiC Schottky-barrier diodes are designed with high repetitive unclamped inductive switching (UIS) capability at rated current...See full productRelated content from Photonics MediaPRODUCTSPhotonics.com 2/28/2023Piezo Objective ScannerThe Nano Scan OP800 piezo objective scanner from Prior Scientific Inc. features a mechanical design and integral capacitive feedback for positioning accuracy. 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