SAPPHIRE C-PLANE SUBSTRATES
Aug 2000Meller Optics Inc.Request Info
Meller Optics Inc. fabricates custom single-crystal sapphire substrates with a smooth, polished surface finish suitable for epitaxy. The c-plane substrates are surface-oriented 2-in.-diameter wafers, with thicknesses of 0.330 or 0.440 mm. They are polished on the front side to a surface roughness of <0.30 nm Ra and a flatness to <5 µm. The wafers can be diced to sizes as small as 4 mm sq and are suitable for epitaxial growth of GaN and other III-V and II-V thin films used in the manufacture of bright blue and green light-emitting diodes. The units also can be used for carrier applications where thin films of silicon or GaAs are polished on top. Lapped flat to <0.5 fringes at HeNe and parallel from 20 to <5 arc sec with ±1.2-µm piece-to-piece uniformity, the wafers are available with one or two sides polished.