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Electron Beam Metrology System

Applied MaterialsRequest Info
 
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SANTA CLARA, Calif., March 27, 2023 — Electron Beam Metrology SystemApplied Materials’ VeritySEM® 10 CD-SEM metrology system is designed to precisely measure the critical dimensions of semiconductor device features patterned with EUV and emerging High-NA EUV lithography. The system architecture enables low landing energy at 2× better resolution compared to conventional CD-SEMs. It also provides a 30% faster scan rate to further reduce interaction with the photoresist and increase throughput. The system’s resolution and scan rate provide improved control of EUV and High-NA EUV lithography and etch processes to help chipmakers accelerate process development and maximize yield in high-volume manufacturing. The system uses sub-nanometer eBeam resolution to capture between 13 and 36 precise CD measurements across the wafer.



Published: March 2023
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ProductsTest & MeasurementlithographyphotoresistEUVHigh-NA EUVmetrologyVeritySEMApplied MaterialsAmericas

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