Extended Visible-InGaAs Photodiode
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Advanced Photonix Introduces Extended Visible-InGaAs Photodetectors with 450 nm – 1700 nm Sensitivity
Advanced Photonix, a division of OSI Optoelectronics, introduces high-sensitivity, 0.3 mm diameter active area, Extended Visible Indium Gallium Arsenide (InGaAs) photodiodes with sensitivity from 450 nm to 1700 nm on a single device. The new device features low dark current and capacitance and is ideal for critical applications requiring detector sensitivity in the visible and the NIR-SWIR spectrum, such as industrial sensing, security and defense, and communications.
Advanced Photonix’s best-in-class, extended visible-InGaAs spectral range, single chip photodiode differentiates from the standard InGaAs spectral response of only 700 nm to 1700 nm. The innovative PIN device is housed in a hermetically sealed TO-46 package.
For more information and to view absolute maximum ratings data, typical electro-optical specifications, a spectral response chart, and mechanical specifications, please download the data sheet here: https://www.advancedphotonix.com/wp-content/uploads/2015/07/APX-ExVInG-0.3-101.pdf.
Advanced Photonix, a division of OSI Optoelectronics, is the leading global provider of innovative photonics, optoelectronics, and advanced electronic systems for prominent aerospace & defense, medical, and industrial OEMs that demand high-reliability, high-performance, market-driven technology solutions today.
https://www.advancedphotonix.com
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