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Field-programmable Gate Arrays

Gowin Semiconductor Corp.Request Info
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GUANGZHOU, China, Oct. 27, 2022 — The Arora V high-performance field-programmable gate array series from Gowin Semiconductor Corp. uses 22-nm SRAM technology.

The devices integrate 270-Mbps to 12.5-Gbps high speed SerDes interfaces, PCIe 2.1 hard core with support for PCIe x1, x2, x8 modes, along with MIPI hard core single lane modules at up to 2.5 Gbps with DDR3 interfacing at speeds up to 1333 Mbps. The first model is the GW5AT-138FC676 with 138K LUT logic resources, 6.4-MB block RAM, 1.1-MB distributed SRAM, advanced DSP blocks, and integrated analog to digital converter.
Oct 2022
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ProductsArora VGowin Semiconductorfield-programmable gate arraysFPGAssemiconductorsOpticsAsia-Pacific

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