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GaN-on-Si Micro-LED Display

Plessey Semiconductors Ltd.Request Info
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PLYMOUTH, England, Oct. 3, 2019 — GaN-on-Si MicroLED DisplayA 2.5-μm pixel pitch ultra-high-resolution micro-LED display from Plessey Semiconductors Ltd. uses monolithic GaN-on-Silicon (GaN-on-Si) technology.

The micro-LED display can be used in next-generation wearables, augmented and virtual reality hardware, and head-up displays. It requires approximately 20% of the power of typical LCOS or DLP displays and can achieve 5× brighter images for comfortable outdoor viewing.

The low thermal resistance of the silicon substrates allows highly efficient heat extraction, resulting in lower junction temperatures with high reliability. The technology also provides energy efficiency, high resolution, and high contrast. It can be scaled to progressively larger wafers, improving cost, uniformity, and yield.
Sep 2019

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