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IR Power Topled with Lens

Osram Opto Semiconductors Inc.Request Info
 
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SUNNYVALE, Calif., Nov. 21, 2011 — The IR Power Topled with lens (SFH 4258S/4259S) from Osram Opto Semiconductors has an 80% higher optical output than the standard version of the infrared LED, while retaining the same surface area and drive current. Using Nanostack thin-chip technology, the result is two p-n junctions, grown one on top of the other. The increased range benefits applications in security and gesture recognition.

More light from the same surface area will always be needed if space is tight, if a greater range is required or if light must be distributed evenly over a greater area. This often can be achieved more flexibly with a large number of small LEDs than with a small number of large ones. The IR Power Topled has the same footprint as the standard version and can be used as a drop-in replacement, so existing designs can continue to be used. Because of the series circuit, the voltage is higher by a factor of ~2.

The device produces optical output power of 80 mW from an operating current of 70 mA. It emits at 850 nm and is a good compromise between maximum spectral sensitivity for CCD and CMOS cameras, and suppressed visibility for the human eye. It is available with beam angles of ±15° (SFH 4258S) and ±25° (SFH 4259S) from two types of lenses.

The LED is useful for IR illumination in security systems. In CCTV applications, the range can be increased significantly with the same number of LEDs. The main area of application in the consumer segment is camera-based gaming.


Photonics.com
Nov 2011
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AmericasLEDsCaliforniadefenseinfrared illuminationIR Power Topledlight sourcesOsram Opto SemiconductorsProductsSFH 4258S TopledSFH 4259S TopledTopled camera-based gamingTopled CCTV applicationsTopled gesture recognitionTopled Nanostack chip technologyTopled security applicationsTopled two p-n junctionsTopled with lens

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