InAsSb Infrared Detector

Hamamatsu CorporationRequest Info
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For high-sensitivity measurements in the 5-µm spectral band, Hamamatsu Photonics has introduced a commercially available indium arsenide antimonide (InAsSb) detector, the P11120-901. It provides peak sensitivity in the 5-µm infrared spectral band but operates over the entire range from 1.6 to 5.8 µm. This high sensitivity is realized via proprietary crystal growth technology.

The InAsSb photodiode used in the P11120-901 has a planar structure which ensures high-speed response and high reliability. Typical rise time is 200 ns.

The window material is Si with an antireflection coating, the package is metal Dewar, and cooling is via liquid nitrogen.

Typical photosensitivity is 0.8 A/W, shunt resistance is 1 × 105 Ω, reverse voltage is 0.1 V, and operating temperature is from -40 to 60 °C

Applications include gas analysis; with the detector covering a wide range of molecular absorption wavelengths, in particular for CO2, SOx, CO and NOx. It is also suited for applications in thermometry (radiometry), thermal imaging, remote sensing, and Fourier transform infrared and IR spectrophotometry.

The company can shift the peak sensitivity to longer wavelengths by altering the composition ratio of As and Sb in the detector, enabling tailor-made InAsSb solutions for specific applications.

Published: July 2010
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Americasantireflection coatingAR coatingcrystal growth technologydetectorFourier transform infrared spectrophotometryFTIRgas analysishamamatsuImagingInAsSbindium arsenide antimonideIR spectrophotometryliquid nitrogenmetal DewarP11120-901planarProductsradiometryremote sensingSensors & DetectorsSi windowthermal imagingthermometry

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