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Infrared Disk Laser

Jenoptik Laser GmbH, Healthcare & Industry
 
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JENA, Germany, Sept. 3, 2010 — Jenoptik Laser GmbH’s Lasers and Material Processing division has introduced the JenLas disk IR70 infrared disk laser that meets the requirements of the new technologies in the field of photovoltaics, such as metal wrap-through (MWT) and emitter wrap-through (EWT) at up to 20,000 holes/s.

The electrical efficiency of the cells can be increased through the use of MWT or EWT technology. To increase the active surface area of the cells, in the case of both technologies, the contacts are laid from the front to the rear side of the cell. The contact fingers that are currently used as standard to cover parts of the active surface area can be eliminated. Further applications are long-distance marking of wafers, laser-fired contacts and laser edge isolation.

The Q-switched laser allows users to achieve high quality at maximum throughput. The pulse length can be adjusted independently of the repetition rate. The laser covers a wide range of applications in the infrared wavelength range at 1030 nm, and the 65-W system is suitable for laser drilling of the silicon wafers that enable efficient production of back-contact solar cells.

Output power is >65 W at 30 kHz, polarization is linear, beam quality is M2 ≤1.2, and beam diameter is 1.4 mm. Pulse energy is >7 mJ at 8 kHz, pulse repetition rate is from 8 to 30 kHz, and typical pulse length is from 650 to 1700 ns, depending upon the repetition rate.

The laser head measures 865 × 340 × 184 mm and weighs ~50 kg.


Photonics.com
Sep 2010
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diskemitter wrap-throughenergyEuropeEWTindustrialinfraredJenLas disk IR70Jenoptiklaser edge isolationlaser-fired contactsLFClong-distance wafer markingmetal wrap-throughMWTphotovoltaicsProductsQ-switchedsilicon waferslasers

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