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Integrated Power Packages

STMicroelectronics International NVRequest Info
 
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GENEVA, Sept. 7, 2021 — Integrated Power PackagesThe MasterGaN3 and MasterGaN5 integrated power packages from STMicroelectronics are designed for applications up to 45 W and 150 W, respectively.

Users are provided with extra flexibility to choose the Gallium Nitride (GaN) device and driver solution when designing switched-mode power supplies, chargers, adapters, high-voltage Power-Factor Correction (PFC), and DC/DC converters. The MasterGaN concept simplifies migrating from ordinary silicon MOSFETs to GaN wide-bandgap power technology. The devices integrate two 650-V power transistors with optimized high-voltage gate drivers and associated safety and protection circuitry, eliminating gate-driver and circuit-layout design challenges.

The GaN power transistors of MasterGaN3 devices have asymmetrical on-resistance of 225 mΩ and 450 mΩ, ideal for soft-switching and active-rectification converters.


Photonics.com
Sep 2021
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ProductsMasterGaN3MasterGaN5integrated power packagesSTMicroelectronicsoptoelectronicsopticsEurope

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