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CAMARILLO, Calif., Dec. 12, 2017 — PhotodiodesThe SXUV100TF135 and SXUV100TF135B photodiodes from Opto Diode Corp. feature integrated thin-film filters.

The detectors each feature a 100-sq-mm active area and a directly deposited thin-film filter for detection between 12 and 18 nm. Both detectors have typical responsivity of 0.09 A/W at 13.5 nm and are optimized for different electrical performance. The photodiodes are ideal for use in applications such as laser power monitoring, semiconductor photolithography and metrology systems that utilize extreme UV light.

The SXUV100TF135 model is optimized for higher speed reverse bias voltage operation. The device has low capacitance, typically 260 pF, with a reverse bias voltage of 12V. The SXUV100TF135B is optimized for zero bias voltage operation where low dark current is of paramount importance. The detector has a high shunt resistance greater than 10 MΩ.

Published: December 2017
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