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Zurich Instruments AG - Lock-In Amplifiers 4/24 LB

Generation 2 905 nm High-Volume Pulsed Semiconductor Laser Diode

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Excelitas Technologies Corp.
The New Excelitas Generation 2 905 high Volume Pulsed Semiconductor Laser Diode (PLD) emitting at 905 nm in the near infrared features a multi-layer monolithic chip design. With an optical emitting area of (225 x 10) μm by emission of three laser lines, the Generation 2 905 PLD offers high output power in a small emitting area. Our second-generation 905 nm PLD provides higher efficiency (3 W/A) than its predecessor for further ranging and reduced power consumption. Its improved GaAs structure offers typically 85 W pulsed peak power when driven at 30 A for an increase of more than 20%...See full product

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