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InGaAs Photodiodes

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Discovery Semiconductors Inc.
High-speed, extended InGaAs 2-μm photodiodes from Discovery Semiconductors Inc. feature high-current handling. The devices can be used for characterizing ultra-fast, mode-locked fiber lasers at multiple wavelengths ranging from 1550 to 2100 nm. Broad operation bandwidth and high speed of the photodiode allows for acquisition of broadband radio-frequency spectra of mode-locked lasers operating at different wavelengths in the 1.55- to 2.1-μm range. Relatively high power handling is advantageous while characterizing ultrashort femtosecond optical pulses with high peak power....See full product

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