Request InfoOpto Diode CorporationNEWBURY PARK, Calif., Jan. 18, 2008 -- Opto Diode Corp. said its new near-infrared (NIR) red-enhanced, 5-mm² ODA-5W-100K photodiode-preamplifier is a combination device that offers 500-Mohm gain (custom gains are also available, upon request), extremely low noise, and a large active area. The high sensitivity, NIR-wavelength response at 940 nm is typically 63 V/mW (min. 55). Packaged in a hermetically-sealed TO-39 can, the enhanced infrared photodiode's operating and storage temperature ranges from -25 to +100 °C. The new detector combination is one of three new devices that will join Opto Diode's expanding range of TO-39...See full productRelated content from Photonics MediaPRODUCTSPhotonics Spectra February 2024 IssueAnalog Front End SensorThe AS7058 from ams OSRAM is an analog front end (AFE) that uses photoplethysmography (PPG) signals to improve the reliability and accuracy of wearable devices. 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Ltd.Chunghwa Leading Photonics Tech (CLPT) provides state-of-the-art wafer processing and device packaging technology for InGaAs photodetector developments. Based on our high quality, high yield and high...